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| Standard Power MOSFET N-Channel Enhancement Mode VDSS IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V ID25 6A 6A RDS(on) 1.8 1.4 Symbol VDSS VDGR V GS VGSM I D25 I DM PD TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C Maximum Ratings 800 800 20 30 6 24 180 -55 ... +150 150 -55 ... +150 V V V V A A W C C C TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) G G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Features q q q q q International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 2 4.5 100 TJ = 25C TJ = 125C 250 1 1.8 1.4 V V nA A mA Applications q VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 3 mA V DS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 V DS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 q q q Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages q 6N80 6N80A Pulse test, t 300 s, duty cycle d 2 % q q Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 91542E(5/96) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXTH 6N80 IXTM 6N80 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4 6 2800 VGS = 0 V, VDS = 25 V, f = 1 MHz 250 100 35 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 40 100 60 110 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 15 50 100 110 200 100 130 30 70 0.7 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W IXTH 6N80A IXTM 6N80A TO-247 AD (IXTH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 10 V; ID = 0.5 * ID25, pulse test 1 2 3 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Source-Drain Diode Symbol IS I SM VSD trr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 24 1.5 900 A A V ns Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V TO-204AA (IXTM) Outline Pins 1 - Gate 2 - Source Case - Drain Dim. Millimeter Min. Max. A 6.4 11.4 A1 3.42 b .97 1.09 D 22.22 e 10.67 11.17 e1 5.21 5.71 L 7.93 p 3.84 4.19 p1 3.84 4.19 q 30.15 BSC R 13.33 R1 4.77 s 16.64 17.14 Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXTH 6N80 IXTM 6N80 IXTH 6N80A IXTM6N80A Fig. 1 Output Characteristics 9 8 7 TJ = 25C V GS = 10V 7V Fig. 2 Input Admittance 9 8 7 ID - Amperes 6 5 4 3 2 1 0 6V ID - Amperes 6 5 4 3 2 1 TJ = 25C 0 5 10 15 20 25 30 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 3.0 T J = 25C Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 2.8 RDS(on) - Normalized 2.00 1.75 1.50 1.25 1.00 0.75 ID = 2.5A RDS(on) - Ohms 2.6 2.4 2.2 2.0 1.8 0 2 4 6 8 10 VGS = 15V V GS = 10V 0.50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 7 6 6N80A Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 BV CES 1.1 VGS(th) ID - Amperes 5 4 3 2 1 0 6N80 BV/VG(th) - Normalized 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C IXYS reserves the right to change limits, test conditions, and dimensions. TJ - Degrees C IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXTH 6N80 IXTM 6N80 IXTH 6N80A IXTM6N80A Fig.7 Gate Charge Characteristic Curve 10 9 V DS = 500V 8 7 ID = 3.0A IG = 10mA Fig.8 Forward Bias Safe Operating Area 10us 10 Limited by R DS(on) 100us 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 ID - Amperes VGE - Volts 1ms 1 10ms 100ms 0.1 1 10 100 1000 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 2750 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 0 5 Ciss Fig.10 Source Current vs. Source to Drain Voltage 9 8 7 Capacitance - pF f = 1 MHz VDS = 25V ID - Amperes 6 5 4 3 2 TJ = 125C T J = 25C Coss Crss 1 0 10 15 20 25 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VCE - Volts VDS - Volts Fig.11 Transient Thermal Impedance 1 Thermal Response - K/W D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 |
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